Ag nanoparticles capped TiO2 nanowires array based capacitive memory

Glancing angle deposition technique was used to fabricate Ag nanoparticles (NPs) capped TiO2 Nanowire (NW) array structure for capacitive memory application. Electron microscopes confirmed the sandwiched of NPs between thin-film (TF) and NW. The average length vertical NW diameter (with density ~ 1012 cm2) were found be 350 ± 5 nm 3.2 0.4 nm, respectively. An enhanced photoluminescence observed in case NWs due presence high carriers as compared bare capacitance (C)–voltage (V) hysteresis measured both at different sweeping voltage (± 3– 10 V) 1 MHz frequency. A window 7.12 V obtained NP with an excellent endurance upto 1000 cycle. Significantly lesser charge loss 23% after a span 104 s hole electron 10.6% 17.8% program erase process device explained help band diagram.